? 2007 ixys corporation, all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 1ma 500 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.5 v i gss v gs = 30 v, v ds = 0v 200 na i dss v ds = v dss 100 a v gs = 0v t j = 125 c 5 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 60 m ds98958f(07/07) hiperfet tm power mosfets n-channel enhancement mode avalanche rated, low q g , low intrinsic r g high dv/dt, low t rr features z double metal process for low gate resistance z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect z fast intrinsic rectifier applications z dc-dc converters z switched-mode and resonant-mode power supplies, >500khz switching z dc choppers z pulse generation z laser drivers advantages z plus 264 tm package for clip or spring mounting z space savings z high power density ixfb80n50q2 v dss = 500v i d25 = 80a r ds(on) 60m t rr 250ns symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c, r gs = 1m 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c80a i drms external lead limited 75 a i dm t c = 25 c, pulse width limited by t jm 320 a i ar t c = 25 c80a e ar t c = 25 c60mj e as t c = 25 c 5.0 j dv/dt i s i dm , v dd v dss , t j 150 c 20 v/ns p d t c = 25 c 960 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force 30...120/6.7...27 n / lbs weight 10 g plus264 tm ( ixfb) g d s ( tab ) g = gate d = drain s = source tab = drain
ixys reserves the right to change limits, test conditions, and dimensions. ixfb80n50q2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 50 65 s c iss 15 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1610 pf c rss 300 pf t d(on) resistive switching times 29 ns t r v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 25 ns t d(off) r g = 1 (external) 60 ns t f 11 ns q g(on) 250 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 80 nc q gd 120 nc r thjc 0.13 c/w r thck 0.13 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0v 80 a i sm repetitive; 320 a pulse width limited by t jm v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 250 ns q rm 1.4 c i rm 12 a note: 1. pulse test, t 300 s, duty cycle, d 2 %. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 plus264 tm (ixfb) outline i f = 25a, v gs = 0v -di/dt = 100 a/ s v r = 100 v
? 2007 ixys corporation, all rights reserved ixfb80n50q2 fig. 2. extended output characteristics @ 25 deg. c 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 101214161820 v d s - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 70 80 024681012 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 70 80 0123456 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 4. r ds(on) norm alized to i d = 40a value vs. junction temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 80a i d = 40a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes external lead current limit fig. 5. r ds(on) norm alized to i d = 40a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 0 40 80 120 160 200 i d - amperes r d s ( o n ) - normalize d t j = 125oc t j = 25oc v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixfb80n50q2 ixys ref: f_80n50q2(95)7-20-07-f fig. 11. capacitance 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - p f c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 40 80 120 160 200 240 280 q g - nanocoulombs v g s - volts v ds = 250v i d = 40a i g = 10ma fig. 7. input admittance 0 20 40 60 80 100 120 140 3.5 4.5 5.5 6.5 7.5 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 160 180 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to- dr ain v o lt ag e 0 40 80 120 160 200 240 0.4 0.6 0.8 1 1.2 1.4 1.6 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. maximum transient thermal impedance 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z ( t h ) j c - oc / w
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